stt320gkxxbt thyristor-thyristor modules type stt320gk08bt stt320gk12bt stt320gk14bt stt320gk16bt stt320gk18bt STT320GK20BT stt320gk22bt v rrm v drm v 800 1200 1400 1600 1800 2000 2200 v rsm v dsm v 900 1300 1500 1700 1900 2100 2300 dimensions in mm (1mm=0.0394") symbol test conditions maximum ratings unit t vj =t vjm t c =85 o c; 180 o sine 520 320 a t vj =45 o c t=10ms (50hz), sine v r =0 t=8.3ms (60hz), sine t vj =t vjm t=10ms(50hz), sine v r =0 t=8.3ms(60hz), sine 9200 10100 8000 8800 a i tsm , i fsm t vj =45 o c t=10ms (50hz), sine v r =0 t=8.3ms (60hz), sine t vj =t vjm t=10ms(50hz), sine v r =0 t=8.3ms(60hz), sine 423000 423000 320000 321000 a 2 s i 2 dt (di/dt) cr 100 500 a/us (dv/dt) cr t vj =t vjm ; v dr =2/3v drm r gk = ; method 1 (linear voltage rise) 1000 v/us p gm t vj =t vjm t p =30us i t =i tavm t p =500us 120 60 w p gav 20 w i trms , i frms i tavm , i favm o c t vj t vjm t stg -40...+140 140 -40...+125 v isol 50/60hz, rms t=1min i isol <1ma t=1s 3000 3600 v~ m d mounting torque (m5) terminal connection torque (m8) _ 2.5-5/22-44 12-15/106-132 nm/lb.in. weight 600 g t vj =t vjm repetitive, i t =750a f=50hz, t p =200us v d =2/3v drm i g =1a non repetitive, i t =250a di g /dt=1a/us v rgm 10 v typical including screws p1 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
stt320gkxxbt thyristor-thyristor modules symbol test conditions characteristic values unit i rrm t vj =t vjm ; v r =v rrm 50 ma features * international standard package * isolation voltage 3600 v~ advantages * space and weight savings * simple mounting * improved temperature and power cycling * reduced protection circuits applications * motor control * power converter * heat and temperature control for industrial furnaces and chemical processes * lighting control * contactless switches ma i drm 50 v v t , v f i t , i f =960a; t vj =25 o c 1.6 v to for power-loss calculations only (t vj =140 o c) 0.8 v r t 0.82 m v d =6v; t vj =25 o c t vj =-40 o c v gt 3 4 v v d =6v; t vj =25 o c t vj =-40 o c i gt 150 200 ma v gd t vj =t vjm ; v d =2/3v drm 0.25 v i gd 10 ma i h t vj =25 o c; v d =6v; r gk = 150 ma t vj =25 o c; t p =30us; v d =6v i g =0.45a; di g /dt=0.45a/us 200 ma i l per thyristor/thyristor; dc current per module r thjc 0.112 0.056 k/w per thyristor/thyristor; dc current per module r thjk 0.152 0.076 k/w d s creeping distance on surface 12.7 mm d a strike distance through air 9.6 mm a maximum allowable acceleration 50 m/s 2 t vj =25 o c; v d =1/2v drm i g =1a; di g /dt=1a/us t gd 2 us t vj =t vjm ; i t =300a; t p =200us; -di/dt=10a/us v r =100v; dv/dt=50v/us; v d =2/3v drm t q 200 us uc q s t vj =125 o c; i t , i f =400a; -di/dt=50a/us 760 i rm 275 a ; v d =v drm t vj =t vjm t vj =130 o c t vj =t vjm heat transfer through aluminium nitride ceramic isolated metal baseplate * p2 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
stt320gkxxbt thyristor-thyristor modules fig. 1 gate trigger characteristics 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.1 1 10 i g v g a 1: i gt , t vj = 140 c 2: i gt , t vj = 25 c 3: i gt , t vj = -40 c v 4: p gm = 20 w 5: p gm = 60 w 6: p gm = 120 w i gd , t vj = 140 c 4 2 1 5 6 3 fig. 2 gate trigger delay time 0.01 0.1 1 10 1 10 100 a i g s t gd limit typ. t vj = 25 c 0.001 0.01 0.1 1 0 2000 4000 6000 8000 1 0000 s t i tsm a 80 % v rrm t vj = 45c 50 hz t vj = 140c fig. 3 surge overload current i tsm , i fsm : crest value, t: duration 1 10 10 4 10 5 10 6 i 2 t t c t ms a 2 s 0 25 50 75 100 125 150 0 100 200 300 400 500 600 a c t vj = 140c t vj = 45c i tavm i favm 180 sin 120 60 30 dc v r = 0v fig. 4 i 2 t versus time (1-10 ms) fig. 4a maximum forward current at case temperature 0 100 200 300 400 500 0 100 200 300 400 500 600 0 25 50 75 100 125 150 i tavm / i favm t a w p tot a c 0.6 0.8 0.1 0.2 0.3 0.4 r thka k/w 0.06 180 sin 120 60 30 dc fig. 5 power dissipation versus on- state current and ambient temperature (per thyristor or diode) p3 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
stt320gkxxbt thyristor-thyristor modules r thjc for various conduction angles d: d r thjc (k/w) dc 0.120 180 0.128 120 0.135 60 0.153 30 0.185 constants for z thjc calculation: i r thi (k/w) t i (s) 1 0.0058 0.00054 2 0.031 0.098 3 0. 072 0.54 4 0.0112 12 fig. 8 transient thermal impedance junction to heatsink (per thyristor or diode) r thjk for various conduction angles d: d r thjk (k/w) dc 0.160 180 0.168 120 0.175 60 0.193 30 0.225 constants for z thjk calculation: i r thi (k/w) t i (s) 1 0.0058 0.00054 2 0.031 0.098 3 0. 072 0.54 4 0.0112 12 5 0.04 12 t z thjk s t 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.00 0.05 0.10 0.15 0.20 0.25 k/w z thjc i rms p tot 0 25 50 75 100 125 150 0 200 400 600 0 500 1000 1500 2000 2500 3 0 00 0a 3xstt320bt circuit 0.2 0.15 0.1 0.07 0.04 0.0 2 r thka k/w 0.3 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.00 0.05 0.10 0.15 0.20 dc 180 120 60 30 dc 180 120 60 30 c t a w k/w s fig. 7 transient thermal impedance junction to case (per thyristor or diode) fig. 6 three phase ac-controller: power dissipation versus rms output current and ambient temperature p4 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
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